精品视频麻豆网站_欧美阿v高清资源在线_成人免费无限丝瓜视频_毛片基地免费看

CN EN
Home
About Us
Newpros
650V Super Junction N-Channel MOSFET
650V Super Junction N-Channel MOSFET Back
 PDF

Introduction 1. The 650V series superjunction products designed by the special multi-layer epitepity process of Yangjie Technology can meet the application requirements of low conduction loss, low switching loss, EMI compatibility and different circuit topologies. The products have good performance of internal conduction resistance (Rdson) and gate charge (Qg), reduce conduction loss and switching loss. Lower switching noise and lower Trr improve system stability and performance.
2. Switch speed and EMI balance, lower Trr characteristics, suitable for charger, power adapter, TV power supply, industrial power supply and other fields, can also meet some half-bridge or various bridge circuit topology application requirements.
Features 1. Adopt the special multi-layer epitaxial process design of Yangjie Technology, with higher process stability and reliability, switching speed and EMI balance, lower Trr characteristics;
2. The series of products have the characteristics of low on-resistance, low gate charge, low on-loss and low switching loss;
3. To-252 /ITO-220AB package, with better calorific value characteristics.
SPECIFICATION
Related new products

High frequency C3 IGBT Module

SGT N80-85V Power MOSFET

SKBPC75 High Current Three Phase Bridge Rectifiers

N60V SGT MOSFET

SOD-323FL Schottky

3GBJ Three-Phase Bridge Rectifier

New N40V SGT MOSFETs for Sweeper

N30V Trench MOSFET for PD VBUS

Portable energy storage power supply special plug-in type fast recovery bridge

IGBT Fast Series